DGAP-Adhoc: Qimonda Announces Technology Breakthrough with DRAM Roadmap to 30nm Generation

Infineon Technologies AG / Miscellaneous

25.02.2008 

Release of an Ad hoc announcement according to § 15 WpHG, transmitted by DGAP - a company of EquityStory AG.
The issuer is solely responsible for the content of this announcement.
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The Infineon subsidiary Qimonda AG releases the following press
announcement:

Qimonda Announces Technology Breakthrough with DRAM Roadmap to 30nm
Generation
Step-change technology to significantly improve productivity

Munich, February 25, 2008 – Qimonda AG (NYSE:QI), a leading global memory
supplier, today announced its technology roadmap down to the 30nm
generation and featuring cell sizes of 4F2. Qimonda’s innovative Buried
Wordline DRAM technology combines high performance, low power consumption
and small chip sizes to further advance the company’s diversified product
portfolio. Qimonda is introducing this leading edge technology now in 65nm
and plans to begin production of a 1 Gbit DDR2 in the second half of
calendar 2008.


Qimonda targets to start mass production of 46nm Buried Wordline DRAM
technology in the second half of 2009. This node will offer more than twice
the bits per wafer over the company’s 58nm trench technology. The company
expects an additional one-time investment of approximately Euro 100 million
in total during financial years 2009 and 2010 to convert its existing
in-house trench capacities to the Buried Wordline technology, which it
expects to finance from its cash flows. This relatively low level of
additional investment is possible by leveraging a combination of Qimonda’s
Buried Wordline and lean manufacturing process with a mainstream stack
capacitor.

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Information and Explaination of the Issuer to this News:

'This new technology has the potential to deliver improvements in our
productivity and cost per bit that are unprecedented in our company’s
history,' said Kin Wah Loh, President and CEO of Qimonda AG. 'We are the
first in the industry to unveil a DRAM technology roadmap down to the 30nm
generation, enabling cell sizes as small as 4F2. The introduction is the
result of our continuous innovation as a leader in the development of
memory products. This step also opens up further partnering opportunities.'


Conference Call
The company will host a conference call today at 5:00pm EST, 2:00pm PST,
10:00pm GMT, and 11:00pm CET. The web cast and slide presentation will be
available at www.qimonda.com. A webcast replay will be available for a
limited time on the company’s web site. An audio replay of the conference
call will also be available at phone number +1 719 457 0820 (US), pass
code: 7140634#, until March 28, 2008.

About Qimonda
Qimonda AG (NYSE: QI) is a leading global memory supplier with a broad
diversified DRAM product portfolio. The company generated net sales of Euro
3.61 billion in its financial year 2007 and had approximately 13,500
employees worldwide. Qimonda has access to five 300mm manufacturing sites
on three continents and operates six major R&D facilities. The company
provides DRAM products for a wide variety of applications, including in the
computing, infrastructure, graphics, mobile and consumer areas, using its
power saving technologies and designs. Further information is available at
www.qimonda.com.


Disclaimer
This press release contains forward-looking statements based on assumptions
and forecasts made by Qimonda management and third parties. Statements that
are not historical facts, including statements about our beliefs and
expectations, are forward-looking statements. These statements are based on
current plans, estimates and projections, and speak only as of the date
they are made. We undertake no obligation to update any of them in light of
new information or future events. These forward-looking statements involve
inherent risks and are subject to a number of uncertainties, including
trends in demand and prices for semiconductors generally and for our
products in particular, the success of our development efforts, both alone
and with our partners, the success of our efforts to introduce new
production processes at our facilities and the actions of our competitors,
the availability of funds for planned expansion efforts and the outcome of
antitrust investigations and litigation matters, as well as other factors.
We caution you that these and a number of other known and unknown risks,
uncertainties and other factors could cause actual future results, or
outcomes to differ materially from those expressed in any forward-looking
statement. These factors include those identified under the heading 'Risk
Factors' in our most recent Annual Report on Form 20-F, available without
charge on our website and at www.sec.gov. 

Contact:
Investor Relations, Tel.: +49 89 234-26655, Fax: +49 89 234-9552987


DGAP 25.02.2008 
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Language:     English
Issuer:       Infineon Technologies AG
              Am Campeon 1-12
              85579 Neubiberg
              Deutschland
Phone:        +49 (0)89 234-26655
Fax:          +49 (0)89 234-955 2987
E-mail:       investor.relations@infineon.com
Internet:     www.infineon.com
ISIN:         DE0006231004
WKN:          623100
Indices:      DAX
Listed:       Regulierter Markt in Frankfurt (Prime Standard); Freiverkehr
              in Berlin, Hannover, München, Hamburg, Düsseldorf, Stuttgart;
              Terminbörse EUREX; Foreign Exchange(s) NYSE
End of News                                     DGAP News-Service
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