IRVINE, Calif., June 9, 2009 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, has introduced a line of 20 new silicon carbide-based power modules in standard dual-diode and full-bridge configurations designed for a wide range of industrial applications.
"By integrating our SiC components into two very low-profile packaging options -- the industry standard SOT227 and our innovative SP1 -- we enable customers to create very compact high-frequency systems with low parasitics," said Philippe Dupin, Director of Power Module Products for Microsemi's Power Products Group located in Bordeaux, France. "These 20 new SiC diode power modules allow our customers to improve their system designs beyond the capabilities of today's conventional power solutions."
An SiC pioneer and innovator, Microsemi's new power module family takes advantage of SiC's superior performance at high operating temperatures for industrial, UPS, SMPS and motor drive applications. The family includes five standard dual-diode products in SOT227 packages, a dual-diode product in an SP1 package and four single-phase bridge rectifiers in SP1 modules.
The SOT227-packaged modules feature current ratings from 20A to 60A and breakdown voltages of either 600V or 1200V, available in either parallel or antiparallel configurations. The new modules can be used in phase-leg, common-anode or common-cathode implementations, and may be wired as a single diode at twice the current capability by connecting the package's two diodes in parallel.
For applications requiring a 90A current rating, Microsemi offers two SP1 products with dual, independent diodes at either the 600V or 1200V breakdown voltages. Completing the family are eight single-phase bridge rectifiers packaged in SP1 modules having ratings of 10A, 20A, 30A or 40A, each at a voltage breakdown of either 600V or 1200V.
Dual-diode SiC Modules with Breakdown Voltages of 600V or 1200V
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VRRM DIODE IF (A) VF (V) Package Part Number
(V) Type Tc=100 C Tj=25 C
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600 SiC 20 1.6 SOT227 APT2X20DC60J
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30 1.6 SOT227 APT2X30DC60J
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40 1.6 SOT227 APT2X40DC60J
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50 1.6 SOT227 APT2X50DC60J
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60 1.6 SOT227 APT2X60DC60J
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90 1.6 SP1 APTDC902U601G
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Single-phase, Full-bridge SiC Diode Modules with Breakdown Voltages
of 600V or 1200V
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VRRM DIODE IF (A) VF (V) Package Part Number
(V) Type Tc=100 C Tj=25 C
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600 SiC 10 1.6 SP1 APTDC10H601G
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20 1.6 SP1 APTDC20H601G
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30 1.6 SP1 APTDC30H601G
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40 1.6 SP1 APTDC40H601G
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Technical data sheets are available on the Microsemi website: www.microsemi.com. Samples are available immediately. Prices range from $36.89 to $214.21 in quantities of 1K to 5K.
About Microsemi
Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed-signal integrated circuits and high reliability semiconductors. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.
Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, battery optimization, reducing size or protecting circuits. The principal markets the company serves include implanted medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its website at http://www.microsemi.com.
The Microsemi Corporation logo is available at http://www.globenewswire.com/newsroom/prs/?pkgid=1233
PLEASE READ THE FOLLOWING FACTORS THAT CAN MATERIALLY AFFECT MICROSEMI'S FUTURE RESULTS.
"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements concerning our new silicon carbide-based power modules in standard dual-diode and full-bridge configurations, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.