Latest News and Press Releases
Want to stay updated on the latest news?
Search Results
Everything
-
Lowering Switching Losses, Devices Combine Low Qrr Down to 105 nC With VF of 1.10 V While Reducing Parasitic Capacitance and Recovery Time MALVERN, Pa., Nov. 06, 2024 (GLOBE NEWSWIRE) -- Vishay...
-
Taking center stage in booth 1607 will be Vishay’s newly released 1200 V MaxSiC™ series silicon carbide (SiC) MOSFETs.
-
Wilmington, Delaware, United States, June 14, 2023 (GLOBE NEWSWIRE) -- Transparency Market Research Inc. - The global silicon carbide MOSFETs market was valued at US$ 1.4 Bn in 2022. It is projected...
-
Kyoto, Japan and Santa Clara, CA, June 17, 2020 (GLOBE NEWSWIRE) -- ROHM announces the cutting-edge 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main...